 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| www..com Amplifier, Power, 1.9W 10.0-13.25 GHz Features 1.9 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation (R) MSAG Process MAAPGM0070-DIE Rev B Preliminary Datasheet Description The MAAPGM0070-DIE is a 4-stage 1.9 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Point-to-Point Radio 10, 11 and 13 GHz Bands Also Available in: Description Part Number Ceramic Package MAAPGM0070 PlasticPackage MAAP-000070-PKG003 Sample Board (Die) SAMPLES Mechanical Sample (Die) MAAP-000070-MCH000 MAAP-000070-SMB003 Electrical Characteristics: TB = 30C1, Z0 = 50 , VDD = 8V, IDQ = 900mA2, Pin = 8 dBm, RG = 100 Parameter Bandwidth Output Power 1-dB Compression Point Power Added Efficiency Small Signal Gain Input VSWR Output VSWR Output Third Order Intercept Output Third Order Intermod, Pout = 26 dBm (DCL) Gate Current Drain Current 1. 2. Symbol f POUT P1dB PAE G VSWR VSWR TOI IMD3 IGG IDD Typical 10-13.25 32.8 32.6 25 34 1.8:1 2.1:1 39 30 10 900 dBm dBc mA mA Units GHz dBm dBm % dB 1 TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.2V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 13.0 +12.0 -3.0 1.42 14.2 170 -55 to +150 MAAPGM0070-DIE Rev B Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 8.0 -2.0 8.0 10.3 Note 5 Max 10.0 -1.2 11.0 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 16 14 Peak Power Dissipation (W) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.0 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. MMIC Base Temperature (C) * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz 40 38 36 34 50 45 40 35 40 38 36 34 MAAPGM0070-DIE Rev B Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 30 28 26 24 22 20 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 Pout PAE 25 20 15 10 5 0 13.5 P1dB (dBm) Pout (dBm) PAE (%) 32 30 32 30 28 26 24 22 20 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 6V 8V 10V Frequency (GHz) Frequency (GHz) Figure 1. Output Power and Power Added Efficiency at VD = 8V, Pin = 8dBm, and 25% IDSS Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS 40 38 36 34 40 38 36 34 Psat (dBm) Psat (dBm) 32 30 28 26 24 22 20 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 6V 8V 10V 32 30 28 26 24 22 20 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 -20C 30C 80C Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power and Drain Voltage at 25% IDSS Figure 4. Saturated Output Power and Temperature at 8V and 25% IDSS 40 36 6 42 40 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Output Power (dBm), SSG(dB), PAE (%) 32 28 24 20 16 12 8 4 0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 Gain Input VSWR Output VSWR 5 38 36 34 32 30 28 26 24 Gain (dB) 4 3 2 Pout SSG PAE IDS 0.4 0.2 0.0 150 1 13.5 22 30 40 50 60 70 80 90 100 110 120 130 140 Frequency (GHz) Junction Temperature (C) Figure 5. Small Signal Gain and Input and Output VSWR at 25% IDSS, VD = 8V Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 12 GHz, and 25% IDSS 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) VSWR Amplifier, Power, 1.9W 10.0-13.25 GHz 40 38 36 34 32 40 38 36 34 32 30 MAAPGM0070-DIE Rev B Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 10 GHz 11 GHz 12 GHz 13 GHz Gain (dB) 28 28 26 24 22 20 18 16 14 12 10 20 22 24 26 28 30 32 34 36 38 40 11 GHz 12 GHz 13 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS Output Power (dBm) Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS 2.0 30 28 26 24 22 20 10 GHz 11 GHz 12 GHz 13 GHz 1.8 1.6 1.4 Drain Current (A) PAE (%) 18 16 14 12 10 8 6 4 2 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 10 GHz 11 GHz 12 GHz 13 GHz Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and 25% IDSS Input Power (dBm) Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS 40 38 36 34 32 40 38 36 34 32 30 Output Power (dBm) 30 Gain (dB) 10 GHz 11 GHz 12 GHz 13 GHz 28 26 24 22 20 18 16 14 12 10 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 28 26 24 22 20 18 16 14 12 10 20 22 24 26 28 30 32 34 36 38 40 11 GHz 12 GHz 13 GHz Input Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS Output Power (dBm) Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz 2.0 30 28 26 24 22 20 10 GHz 11 GHz 12 GHz 13 GHz 1.8 1.6 1.4 MAAPGM0070-DIE Rev B Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. Drain Current (A) PAE (%) 18 16 14 12 10 8 6 4 2 0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 10 GHz 11 GHz 12 GHz 13 GHz Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and 25% IDSS Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS 50 48 46 44 42 40 100 90 80 70 11 GHz 12 GHz 13 GHz 36 34 32 30 28 26 24 22 20 7 9 11 13 15 17 19 21 23 25 11 GHz 12 GHz 13 GHz IMD3 (dBc) TOI (dBm) 38 60 50 40 30 20 10 0 7 9 11 13 15 17 19 21 23 25 Fundamental Output Power, Single Tone (dBm) Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V. Fundamental Output Power per Tone (dBm) Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 50 48 100 90 11 GHz 12 GHz 13 GHz 46 44 42 70 40 80 36 34 32 30 IMD3 (dBc) 11 GHz 12 GHz 13 GHz 7 9 11 13 15 17 19 21 23 25 TOI (dBm) 38 60 50 40 30 28 26 24 22 20 20 10 0 7 9 11 13 15 17 19 21 23 25 Fundamental Output Power, Single Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V. Fundamental Output Power per Tone (dBm) Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz MAAPGM0070-DIE Rev B Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 50 48 46 44 42 40 70 90 80 11 GHz 12 GHz 13 GHz 100 36 34 32 30 28 26 24 22 20 7 9 11 13 15 17 19 21 23 25 11 GHz 12 GHz 13 GHz IMD3 (dBc) TOI (dBm) 38 60 50 40 30 20 10 0 7 9 11 13 15 17 19 21 23 25 Fundamental Output Power, Single Tone (dBm) Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V. Fundamental Output Power per Tone (dBm) Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V. 50 48 46 44 60 55 50 45 IMD3 (dBc) TOI (dBm) 42 40 38 36 34 32 30 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 11 GHz 12 GHz 13 GHz 40 35 30 25 20 15 10 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 11 GHz 12 GHz 13 GHz MMIC Base Temperature (C) Figure 21. Third Order Intercept vs. Temperature and Frequency at 8V and Pout = 26 dBm DCL. MMIC Base Temperature (C) Figure 22. Third Order Intermod vs. Temperature and Frequency at 8V and Pout = 25 dBm DCL. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz Mechanical Information Chip Size: 3.000 x 3.150 x 0.075 mm (118 x 124 x 3 mils) MAAPGM0070-DIE Rev B Preliminary Datasheet Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 23. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 100 150 x 150 Size (mils) 4x8 8x4 6x6 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1.9W 10.0-13.25 GHz Assembly and Bonding Diagram GND MAAPGM0070-DIE VDD 0.01-0.1F Rev B Preliminary Datasheet VDD VGG Gnd RF 100200 pF 100200 pF 100200 pF RFIN RFOUT 100200 pF 100200 pF 100200 pF 100 VGG 0.01-0.1F GND Figure 24. Recommended operational configuration. Wire bond as shown. Die Handling: Refer to Application Note AN3016. Assembly Instructions: Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 C to less than 7 minutes. Refer to Application Note AN3017 for more detailed information. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
Price & Availability of MAAPGM0070-DIE
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |